Super Junction MOSFET realizes N-type and P-type periodically arranged junction pressure resistant layer, introduces high concentration of equal amount of heterotype charge, converts from surface field to internal field. Compared with traditional VDMOS devices, the relationship between Rdson*A and BV is changed from 2.5 power to 1.32 power.

CoolSemi's SJ products use advanced superjunction technology and optimized design structure, and its extremely low specific on-state resistance (Rdson*A) is superior to the series of Infineon C6, which can improve the efficiency and power density of switching power supplies.