The difference between the Insulated Gate Bipolar Transistor (IGBT) power device and VDMOS is that the N epitaxial layer is not N+ layer but p+ layer. The conductivity modulation effect is generated in the N-type drift region during conduction, and the conduction voltage drop is greatly reduced.

CoolSemi's IGBT power device uses the trench gate field-stop design, reducing epitaxial layer thickness to 60um and Vcesat to 1.45V, which is comparable to the performance of Infineon IFX6.