Shielded Gate Trench MOSFET (SGT), the lower half of which is the shielded gate electrode.

CoolSemi's SGT MOSFET uses the ultra-deep trench design, and the connection between shield gate and source is short-circuited. It shields most of the Qgd charge, greatly reduces the Miller capacitance of the device, effectively increases the switching speed of the device, and has lower switching loss. Deeper trench depth and lower on-resistance, resulting in lower conduction loss.